PNP Transistor for Sensor Module Power Control

✅ Transistor Type: PNP, matches the required high-side BJT switch type.
✅ Current - Collector (Ic) (Max): 200 mA, meets the ≥200 mA requirement and provides the requested margin over the 50 mA sensor load.
✅ Voltage - Collector Emitter Breakdown (Max): 40 V, exceeds the ≥20 V requirement.
✅ DC Current Gain (hFE) (Min): 100 @ 10 mA, 1 V, satisfies the ≥80 minimum requirement.
✅ Vce Saturation (Max): 400 mV @ 5 mA, 50 mA, meets the ≤400 mV requirement and is suitable for the 50 mA sensor current noted in the task.
✅ Power - Max: 300 mW, exceeds the ≥200 mW requirement.
✅ Mounting Type: Surface Mount, matches requirement.
✅ Package / Case: TO-236-3, SC-59, SOT-23-3, acceptable SOT-23 variant and matches the required package style.
✅ Operating Temperature: -55°C to 150°C (TJ), exceeds the required -40°C to +125°C range.
✅ RoHS Compliance: ROHS3 Compliant, satisfies the RoHS requirement.

All required specifications are satisfied. This component is approved for the stated PNP high-side switch application.