P-Channel MOSFET for High-Side Power Switch

✅ FET Type: P-Channel, matches the required high-side switch topology.
✅ Technology: MOSFET (Metal Oxide), matches requirement.
✅ Drain to Source Voltage (Vdss): 20V, satisfies the ≥12V requirement.
✅ Current - Continuous Drain (Id) @ 25°C: 1A, satisfies the ≥1A requirement and provides margin over the 300mA load.
✅ Vgs(th) (Max): 1V, satisfies the ≤2.5V requirement for reliable turn-on.
✅ Rds On (Max): 300mΩ @ 1.1A, 4.5V, meets the ≤300mΩ requirement.
✅ Vgs (Max): ±8V, satisfies the ≥8V requirement.
✅ Power Dissipation (Max): 500mW, satisfies the ≥300mW requirement.
✅ Mounting Type: Surface Mount, matches requirement.
✅ Package / Case: SOT-23-3 listed in package/case, matches requirement.
✅ Operating Temperature: -55°C to 150°C, matches requirement.
✅ RoHS Compliance: ROHS3 Compliant, satisfies requirement.
All required specifications are satisfied. This component is approved for the stated 5V high-side P-channel MOSFET switching application.