P-Channel MOSFET for High-Side Power Switch

✅ FET Type: P-Channel, matches the requirement.
✅ Technology: MOSFET (Metal Oxide), matches the requirement.
✅ Drain to Source Voltage (Vdss): 20V, satisfies the ≥12V requirement.
✅ Current - Continuous Drain (Id) @ 25°C: 4.5A, exceeds the ≥1A requirement and provides ample margin over the 300mA load.
✅ Vgs(th) (Max): 950mV, satisfies the ≤2.5V requirement for reliable turn-on.
✅ Rds On (Max): 40mΩ, much lower than the ≤300mΩ requirement, minimizing voltage drop and power loss.
✅ Vgs (Max): ±8V, satisfies the ≥8V requirement.
✅ Power Dissipation (Max): 1.3W, exceeds the ≥300mW requirement.
✅ Mounting Type: Surface Mount, matches the requirement.
✅ Package / Case: SOT-23-3 variant, with supplier device package SOT-23-3, satisfies the SOT-23-3 requirement.
✅ Operating Temperature: -55°C to 150°C, matches the required range.
✅ RoHS Compliance: ROHS3 Compliant, satisfies the requirement.

All required specifications are satisfied. This component is approved for the 5V high-side P-channel MOSFET switch application.